Home Database Mysql Tutorial RMAN深入解析之--内存中的RMAN

RMAN深入解析之--内存中的RMAN

Jun 07, 2016 pm 02:52 PM
Memory go deep parse

RMAN深入解析之--内存中的RMAN RMAN会在内存中创建一些缓冲区,然后通过这些缓冲区将数据块 写入到备份中。内存的利用与PGA(有时是SGA)的总体大小有关。 内存缓冲区分为输入缓冲区和输出缓冲区。输入缓冲区(input buffer)填充从备份文件中读取数据块;输出

RMAN深入解析之--内存中的RMAN

   RMAN会在内存中创建一些缓冲区,然后通过这些缓冲区将数据块 写入到备份中。内存的利用与PGA(有时是SGA)的总体大小有关。

    内存缓冲区分为输入缓冲区和输出缓冲区。输入缓冲区(input buffer)填充从备份文件中读取数据块;输出缓冲区(output buffer)则在执行内存对内存的写操作时填充需要备份的数据块,一旦输出缓冲区被填满,输出缓冲区的内容就会被写入到备份位置。

wKiom1OgEwiRab_HAAINfI-yIlk832.jpg

RMAN的内存利用

  在磁盘上备份会使用PGA内存空间作为备份缓冲区,PGA内存空间从用于信道进程的内存空间中分配。如果操作系统没有配置本地异步I/O,则可以利用DBWR_IO_SLAVES参数使用I/O丛属来填充内存中的输入缓冲。如果设置DBWR_IO_SLAVES参数为任意的非零值,则RMAN会自动分配4个I/O从属来协调输入缓冲区中数据块加载。为了实现这一功能,RMAN必须利用一个共享内存区域。因此,用于磁盘备份的内存缓冲区会被推入共享池,如果存在大池,则被推入大池。如果没有使用磁带I/O从属,则会在PGA中分配用于磁带输出缓冲区的内存。

查看RMAN备份输入缓冲区的信息:

[oracle@rh6 ~]$ rman target /
Recovery Manager: Release 11.2.0.1.0 - Production on Tue Jun 17 18:30:27 2014
Copyright (c) 1982, 2009, Oracle and/or its affiliates.  All rights reserved.
connected to target database: PROD (DBID=239333010)
RMAN> backup database;
Starting backup at 17-JUN-14
allocated channel: ORA_DISK_1
channel ORA_DISK_1: SID=43 device type=DISK
channel ORA_DISK_1: starting full datafile backup set
channel ORA_DISK_1: specifying datafile(s) in backup set
input datafile file number=00001 name=/u01/app/oracle/oradata/prod/system01.dbf
input datafile file number=00002 name=/u01/app/oracle/oradata/prod/sysaux01.dbf
input datafile file number=00005 name=/u01/app/oracle/oradata/prod/example01.dbf
input datafile file number=00003 name=/u01/app/oracle/oradata/prod/undotbs01.dbf
input datafile file number=00004 name=/u01/app/oracle/oradata/prod/users01.dbf
channel ORA_DISK_1: starting piece 1 at 17-JUN-14
channel ORA_DISK_1: finished piece 1 at 17-JUN-14
piece handle=/u01/app/oracle/product/11.2.0/db_1/dbs/04pb386s_1_1 tag=TAG20140617T183051 comment=NONE
channel ORA_DISK_1: backup set complete, elapsed time: 00:01:42
channel ORA_DISK_1: starting full datafile backup set
channel ORA_DISK_1: specifying datafile(s) in backup set
including current control file in backup set
including current SPFILE in backup set
channel ORA_DISK_1: starting piece 1 at 17-JUN-14
channel ORA_DISK_1: finished piece 1 at 17-JUN-14
piece handle=/u01/app/oracle/product/11.2.0/db_1/dbs/05pb38a3_1_1 tag=TAG20140617T183051 comment=NONE
channel ORA_DISK_1: backup set complete, elapsed time: 00:00:01
Finished backup at 17-JUN-14
查看缓冲区信息:
sql>select set_count,device_type,type,filename,buffer_size,buffer_count,open_time,close_time
  2    from v$backup_async_io
  3*   order by set_count,type,open_time,close_time
 SET_COUNT DEVICE_TYP TYPE      FILENAME                                 BUFFER_SIZE BUFFER_COUNT OPEN_TIME CLOSE_TIM
---------- ---------- --------- ---------------------------------------- ----------- ------------ --------- ---------
         4 DISK       AGGREGATE                                                    0            0 17-JUN-14 17-JUN-14
         4 DISK       INPUT     /u01/app/oracle/oradata/prod/example01.d      524288            6 17-JUN-14 17-JUN-14
                                bf
         4 DISK       INPUT     /u01/app/oracle/oradata/prod/sysaux01.db      524288            6 17-JUN-14 17-JUN-14
                                f
         4 DISK       INPUT     /u01/app/oracle/oradata/prod/system01.db      524288            6 17-JUN-14
                                f
         4 DISK       INPUT     /u01/app/oracle/oradata/prod/users01.dbf      524288            6 17-JUN-14 17-JUN-14
         4 DISK       INPUT     /u01/app/oracle/oradata/prod/undotbs01.d      524288            6 17-JUN-14 17-JUN-14
                                bf
         4 DISK       OUTPUT    /u01/app/oracle/product/11.2.0/db_1/dbs/     1048576            4 17-JUN-14
                                04pb386s_1_1
7 rows selected.
Elapsed: 00:00:00.02
18:32:19 SYS@ prod>
Copy after login






Statement of this Website
The content of this article is voluntarily contributed by netizens, and the copyright belongs to the original author. This site does not assume corresponding legal responsibility. If you find any content suspected of plagiarism or infringement, please contact admin@php.cn

Hot AI Tools

Undresser.AI Undress

Undresser.AI Undress

AI-powered app for creating realistic nude photos

AI Clothes Remover

AI Clothes Remover

Online AI tool for removing clothes from photos.

Undress AI Tool

Undress AI Tool

Undress images for free

Clothoff.io

Clothoff.io

AI clothes remover

AI Hentai Generator

AI Hentai Generator

Generate AI Hentai for free.

Hot Article

R.E.P.O. Energy Crystals Explained and What They Do (Yellow Crystal)
2 weeks ago By 尊渡假赌尊渡假赌尊渡假赌
Hello Kitty Island Adventure: How To Get Giant Seeds
1 months ago By 尊渡假赌尊渡假赌尊渡假赌
Two Point Museum: All Exhibits And Where To Find Them
1 months ago By 尊渡假赌尊渡假赌尊渡假赌

Hot Tools

Notepad++7.3.1

Notepad++7.3.1

Easy-to-use and free code editor

SublimeText3 Chinese version

SublimeText3 Chinese version

Chinese version, very easy to use

Zend Studio 13.0.1

Zend Studio 13.0.1

Powerful PHP integrated development environment

Dreamweaver CS6

Dreamweaver CS6

Visual web development tools

SublimeText3 Mac version

SublimeText3 Mac version

God-level code editing software (SublimeText3)

Large memory optimization, what should I do if the computer upgrades to 16g/32g memory speed and there is no change? Large memory optimization, what should I do if the computer upgrades to 16g/32g memory speed and there is no change? Jun 18, 2024 pm 06:51 PM

For mechanical hard drives or SATA solid-state drives, you will feel the increase in software running speed. If it is an NVME hard drive, you may not feel it. 1. Import the registry into the desktop and create a new text document, copy and paste the following content, save it as 1.reg, then right-click to merge and restart the computer. WindowsRegistryEditorVersion5.00[HKEY_LOCAL_MACHINE\SYSTEM\CurrentControlSet\Control\SessionManager\MemoryManagement]"DisablePagingExecutive"=d

How to check memory usage on Xiaomi Mi 14Pro? How to check memory usage on Xiaomi Mi 14Pro? Mar 18, 2024 pm 02:19 PM

Recently, Xiaomi released a powerful high-end smartphone Xiaomi 14Pro, which not only has a stylish design, but also has internal and external black technology. The phone has top performance and excellent multitasking capabilities, allowing users to enjoy a fast and smooth mobile phone experience. However, performance will also be affected by memory. Many users want to know how to check the memory usage of Xiaomi 14Pro, so let’s take a look. How to check memory usage on Xiaomi Mi 14Pro? Introduction to how to check the memory usage of Xiaomi 14Pro. Open the [Application Management] button in [Settings] of Xiaomi 14Pro phone. To view the list of all installed apps, browse the list and find the app you want to view, click on it to enter the app details page. In the application details page

Samsung announced the completion of 16-layer hybrid bonding stacking process technology verification, which is expected to be widely used in HBM4 memory Samsung announced the completion of 16-layer hybrid bonding stacking process technology verification, which is expected to be widely used in HBM4 memory Apr 07, 2024 pm 09:19 PM

According to the report, Samsung Electronics executive Dae Woo Kim said that at the 2024 Korean Microelectronics and Packaging Society Annual Meeting, Samsung Electronics will complete the verification of the 16-layer hybrid bonding HBM memory technology. It is reported that this technology has passed technical verification. The report also stated that this technical verification will lay the foundation for the development of the memory market in the next few years. DaeWooKim said that Samsung Electronics has successfully manufactured a 16-layer stacked HBM3 memory based on hybrid bonding technology. The memory sample works normally. In the future, the 16-layer stacked hybrid bonding technology will be used for mass production of HBM4 memory. ▲Image source TheElec, same as below. Compared with the existing bonding process, hybrid bonding does not need to add bumps between DRAM memory layers, but directly connects the upper and lower layers copper to copper.

Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year Mar 22, 2024 pm 08:16 PM

This site reported on March 21 that Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers. Micron said that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times more wafers than standard DDR5, and it is expected that as performance improves and packaging complexity intensifies, in the future HBM4 This ratio will further increase. Referring to previous reports on this site, this high ratio is partly due to HBM’s low yield rate. HBM memory is stacked with multi-layer DRAM memory TSV connections. A problem with one layer means that the entire

Lexar launches Ares Wings of War DDR5 7600 16GB x2 memory kit: Hynix A-die particles, 1,299 yuan Lexar launches Ares Wings of War DDR5 7600 16GB x2 memory kit: Hynix A-die particles, 1,299 yuan May 07, 2024 am 08:13 AM

According to news from this website on May 6, Lexar launched the Ares Wings of War series DDR57600CL36 overclocking memory. The 16GBx2 set will be available for pre-sale at 0:00 on May 7 with a deposit of 50 yuan, and the price is 1,299 yuan. Lexar Wings of War memory uses Hynix A-die memory chips, supports Intel XMP3.0, and provides the following two overclocking presets: 7600MT/s: CL36-46-46-961.4V8000MT/s: CL38-48-49 -1001.45V In terms of heat dissipation, this memory set is equipped with a 1.8mm thick all-aluminum heat dissipation vest and is equipped with PMIC's exclusive thermal conductive silicone grease pad. The memory uses 8 high-brightness LED beads and supports 13 RGB lighting modes.

Sources say Samsung Electronics and SK Hynix will commercialize stacked mobile memory after 2026 Sources say Samsung Electronics and SK Hynix will commercialize stacked mobile memory after 2026 Sep 03, 2024 pm 02:15 PM

According to news from this website on September 3, Korean media etnews reported yesterday (local time) that Samsung Electronics and SK Hynix’s “HBM-like” stacked structure mobile memory products will be commercialized after 2026. Sources said that the two Korean memory giants regard stacked mobile memory as an important source of future revenue and plan to expand "HBM-like memory" to smartphones, tablets and laptops to provide power for end-side AI. According to previous reports on this site, Samsung Electronics’ product is called LPWide I/O memory, and SK Hynix calls this technology VFO. The two companies have used roughly the same technical route, which is to combine fan-out packaging and vertical channels. Samsung Electronics’ LPWide I/O memory has a bit width of 512

What should I do if the memory in win10 cannot be written?_How to solve the problem that the memory in win10 cannot be written What should I do if the memory in win10 cannot be written?_How to solve the problem that the memory in win10 cannot be written Mar 25, 2024 am 11:01 AM

Some users encountered a memory error prompt when using Win10, called "The memory cannot be written". What is going on? Below, the editor will share with you the solution to the Windows 10 system prompt "The memory cannot be written" 1. Press win+r to open the run function on the computer, enter services and msc, and then click OK. 2. Find the Windows Management Instrumentation service in the services window, click "Stop", and then click OK. 3. Still press win+r to open the computer’s run function and enter

Kingbang launches new DDR5 8600 memory, offering CAMM2, LPCAMM2 and regular models to choose from Kingbang launches new DDR5 8600 memory, offering CAMM2, LPCAMM2 and regular models to choose from Jun 08, 2024 pm 01:35 PM

According to news from this site on June 7, GEIL launched its latest DDR5 solution at the 2024 Taipei International Computer Show, and provided SO-DIMM, CUDIMM, CSODIMM, CAMM2 and LPCAMM2 versions to choose from. ▲Picture source: Wccftech As shown in the picture, the CAMM2/LPCAMM2 memory exhibited by Jinbang adopts a very compact design, can provide a maximum capacity of 128GB, and a speed of up to 8533MT/s. Some of these products can even be stable on the AMDAM5 platform Overclocked to 9000MT/s without any auxiliary cooling. According to reports, Jinbang’s 2024 Polaris RGBDDR5 series memory can provide up to 8400

See all articles