SK Hynix announces the launch of HBM4E memory as early as 2026, with 1.4 times the bandwidth of the previous generation

According to news from this site on May 14, Kim Gwi-wook, the head of HBM, recently claimed in an official announcement that the current HBM technology in the industry has reached a new level. Industry demand has prompted SK Hynix to accelerate the development process. As early as Their HBM4E memory will be launched in 2026, and the related memory bandwidth will be 1.4 times that of HBM4.

In addition to HBM4E, according to previous reports on this site, it is reported that SK Hynix plans to launch the first batch of HBM4 products using 12-layer DRAM stacking in the second half of 2025. The 16-layer stacked HBM will be launched later in 2026.

The "acceleration process" of the development of HBM4/HBM4E undoubtedly shows the strong demand for high-performance memory by giants in the AI ​​field. Increasingly powerful AI processors require higher memory bandwidth. Auxiliary.

Related reading:

"SK Hynix accelerates the mass production of HBM4 memory, aiming to launch the first batch of products in the second half of 2025"

"SK Hynix and TSMC signed a memorandum of understanding, Target to put HBM4 into production in 2026》

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