Toshiba's 300mm wafer power semiconductor manufacturing plant is completed: after the first phase of production is put into operation, the production capacity is 2.5 times that of the fiscal year 2021 plan

News from this site on May 24, Toshiba Electronic Components and Storage Co., Ltd. (hereinafter referred to as Toshiba) issued an announcement on May 23, announced the completion of its 300 mm wafer power semiconductor manufacturing plant and office building.

Toshiba said in a press release that it is currently installing relevant equipment and strives to start mass production in the second half of fiscal year 2024. Once the first phase of the project is fully put into production, Toshiba's power semiconductor (mainly MOSFET and IGBT) production capacity will be 2.5 times what it was when the investment plan was formulated in fiscal year 2021, while the second phase construction and operation will be decided based on market conditions.

The new manufacturing building follows and will make a significant contribution to Toshiba’s Business Continuity Plan (BCP): It has an isolation structure and redundancy to absorb earthquake shocks power supply.

According to the official press release, energy from renewable sources and the building’s rooftop solar panels (on-site PPA model) will allow the facility to meet 100% of its electricity needs through renewable energy.

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