Technology peripherals
It Industry
Micron Taichung factory fire caused by high-pressure gas leakage: no casualties reported, operations have resumed
Micron Taichung factory fire caused by high-pressure gas leakage: no casualties reported, operations have resumed
According to news from this site on June 22, Micron issued an announcement on Friday, stating that a fire broke out at its factory in Taichung on Thursday night. Fortunately, no casualties were reported from the fire, and the factory has now returned to normal operations.
Micron stated in the announcement that after the fire broke out, the automatic fire extinguishing system in the factory worked and quickly controlled the fire. Based on the on-site report, it was initially concluded that the cause of the fire was the high-pressure gas cylinder in the supply room. caused by leakage, and the specific circumstances are still under investigation.
The emergency team of the Micron factory commanded the scene and immediately evacuated the employees. Dozens of firefighters arrived at the scene and quickly controlled the fire. The report showed that about two square meters of space was burned. The cause of the high-pressure gas leakage is still under further investigation. .
It is currently unclear the subsequent impact of this fire. Note from this site: Fires sometimes cause product prices to rise. SK Hynix’s factory in Wuxi, Jiangsu reported an explosion on September 4, 2013, and it was extinguished within 2 hours. It responded to the fire and partially resumed operations a few days later, causing its memory prices to rise by up to 19% in 2013.
The above is the detailed content of Micron Taichung factory fire caused by high-pressure gas leakage: no casualties reported, operations have resumed. For more information, please follow other related articles on the PHP Chinese website!
Hot AI Tools
Undresser.AI Undress
AI-powered app for creating realistic nude photos
AI Clothes Remover
Online AI tool for removing clothes from photos.
Undress AI Tool
Undress images for free
Clothoff.io
AI clothes remover
AI Hentai Generator
Generate AI Hentai for free.
Hot Article
Hot Tools
Notepad++7.3.1
Easy-to-use and free code editor
SublimeText3 Chinese version
Chinese version, very easy to use
Zend Studio 13.0.1
Powerful PHP integrated development environment
Dreamweaver CS6
Visual web development tools
SublimeText3 Mac version
God-level code editing software (SublimeText3)
Hot Topics
1359
52
Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory
Jul 31, 2024 am 08:05 AM
According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276
Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year
Mar 22, 2024 pm 08:16 PM
This site reported on March 21 that Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers. Micron said that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times more wafers than standard DDR5, and it is expected that as performance improves and packaging complexity intensifies, in the future HBM4 This ratio will further increase. Referring to previous reports on this site, this high ratio is partly due to HBM’s low yield rate. HBM memory is stacked with multi-layer DRAM memory TSV connections. A problem with one layer means that the entire
Sharing practical Word skills: 2 tricks to easily solve the layout of multiple pictures!
Apr 01, 2023 am 10:57 AM
Multi-image formatting is one of the common scenarios when editing documents in Word. Almost everyone will encounter it, and it is still a big problem for many people. When the number of pictures increases, many people don’t know how to place the pictures. How to quickly and efficiently create a group of pictures? Because I have not mastered the systematic routine skills, each production takes a lot of time and cannot produce satisfactory results. Today I will teach you 2 tips to easily solve the problem of multi-image layout!
Analyst: Micron's non-volatile NVDRAM memory has many highlights, but is unlikely to be commercialized
Jan 30, 2024 pm 06:30 PM
According to news from this site on January 29, Micron disclosed its 32Gb3DNVDRAM (non-volatile DRAM) research and development results at the IEEEIEDM conference in late 2023. However, according to information obtained by foreign media Blocks&Files from two industry analysts interviewed, this breakthrough new memory is basically unlikely to be commercialized and mass-produced, but the technological progress it demonstrates is expected to appear in future memory products. . Micron's NVDRAM memory is based on the principle of ferroelectricity (note from this site: it has spontaneous polarization, and the polarization direction can be reversed under an external electric field). It can achieve high performance close to DRAM while having non-volatility similar to NAND flash memory. Durable and low latency. This new type of memory uses double-layer 3D stacking and has a capacity of 32Gb.
Micron's 1-gamma process memory is expected to be mass-produced in Taiwan in the first half of 2025
Sep 14, 2023 pm 08:29 PM
This site reported on September 4 that according to Taiwan's "Central News Agency", Lu Donghui, chairman of Micron Taiwan, said that as many as 65% of Micron's DRAM products are produced in Taiwan. Among them, the Taiwanese and Japanese teams jointly developed a new generation of 1-gamma process to It will be mass-produced in the Taichung factory in the first half of 2025. This is Micron’s first generation using extreme ultraviolet (EUV) process technology. It is reported that Micron currently only has an EUV manufacturing plant in Taichung. The 1-gamma process will be mass-produced in the Taichung plant first, and the Japanese plant will also introduce EUV equipment in the future. Lu Donghui emphasized that Taiwan and Japan are very important manufacturing centers for Micron. As many as 65% of Micron's dynamic random access memory (DRAM) products are produced in Taiwan; after the Japanese factory started mass production of 1-b in October last year
Sequential reads up to 26GB/s! Micron launches industry's first eco-friendly PCIe 6.0 data center SSD
Aug 06, 2024 pm 06:56 PM
According to news from this site on August 6, Micron announced on the 5th local time in Santa Clara, California, the United States, that it had successfully developed the industry's first PCIe6.0 data center solid-state drive for ecological support. The SSD has a sequential read rate of up to 26GB/s. The 9550 series PCIe5.0 data center solid-state drives released by Micron on July 23 have a sequential read rate of 14GB/s. In other words, Micron’s new generation of products has improved by 85.7% in sequential reading. As one of the signs of launching the PCIe6.0 ecosystem, Micron will showcase its new PCIe6.0 data center solid-state drive products at the FMS2024 Summit to be held in Santa Clara from August 6th to 8th local time. In addition, Micron Senior Vice President Raj Nala
Micron launches 2650 solid-state drive: equipped with the latest ninth generation 3D TLC NAND flash memory, 7/6 GB/s sequential read and write
Jul 31, 2024 am 11:02 AM
This website reported on July 31 that while Micron released its ninth-generation 276-layer 3DTLC NAND flash memory, it also launched the 2650 solid-state drive equipped with this flash memory. This disk is intended for daily PC and notebook use and is a consumer-grade OEM product. Micron 2650 adopts PCIe4.0×4 interface and is available in three sizes: M.22230/2242/2280. The capacity covers 256GB, 512GB and 1TB, all of which are single-sided designs. Thanks to its 276-layer 3600MT/s six-plane TLCNAND flash memory B68S, Micron 2650 showed excellent results in the PCMark10 benchmark test: its average running score is up to 38 points higher than that of several major original manufacturers' competitors that are also based on TLC flash memory.
Micron: Intelligent LPCAMM2 memory will be launched in the first half of this year, and laptop users can upgrade by themselves
Jan 19, 2024 am 10:21 AM
According to news from this site on January 19, laptop onboard memory has been criticized by many users. It is indeed difficult to use replaceable memory on thin and light notebooks that cost a lot of space. To this end, major manufacturers are developing a kind of LPCAMM memory, which is expected to overcome the shortcomings of LPDDR onboard memory and So-DIMM traditional slot memory. Micron launched the industry's first standard low-power compressed add-on memory module (LPCAMM2) at CES2024. This module uses LPDDR5X memory with capacities ranging from 16GB to 64GB. Micron said that LPCAMM2 memory modules are now sampling and mass production is planned for the first half of 2024. Micron will also provide LPCAMM2 memory products to end customers to enable
