adopts the eighth generation BiCS FLASH 3D flash memory technology and has the highest capacity in the industry.
Compared with the fifth generation QLC device, the bit density is increased by about 2.3 times, and the write energy efficiency is improved by about 70%.
Using a 16-chip stacked architecture, the size is 11.5 x 13.5 mm, the height is 1.5 mm, and the total capacity reaches 4 TB.
Uses CBA (CMOS Direct Binding to Array) technology to create higher density devices supporting 3.6Gbps interface speeds.
Introducing 1Tb QLC memory, specially designed for performance-sensitive applications, improving sequential write performance by approximately 30% and reducing read latency by approximately 15%.
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