


The highest capacity in the industry, Kioxia 2Tb QLC flash memory sample shipments: bit density increased 2.3 times compared to the fifth generation
- 2Tb QLC storage product
adopts the eighth generation BiCS FLASH 3D flash memory technology and has the highest capacity in the industry.
- Bit density and write energy efficiency improvement
Compared with the fifth generation QLC device, the bit density is increased by about 2.3 times, and the write energy efficiency is improved by about 70%.
- Compact package
Using a 16-chip stacked architecture, the size is 11.5 x 13.5 mm, the height is 1.5 mm, and the total capacity reaches 4 TB.
- CBA Technology
Uses CBA (CMOS Direct Binding to Array) technology to create higher density devices supporting 3.6Gbps interface speeds.
- Product line expansion
Introducing 1Tb QLC memory, specially designed for performance-sensitive applications, improving sequential write performance by approximately 30% and reducing read latency by approximately 15%.
The above is the detailed content of The highest capacity in the industry, Kioxia 2Tb QLC flash memory sample shipments: bit density increased 2.3 times compared to the fifth generation. For more information, please follow other related articles on the PHP Chinese website!

Hot AI Tools

Undresser.AI Undress
AI-powered app for creating realistic nude photos

AI Clothes Remover
Online AI tool for removing clothes from photos.

Undress AI Tool
Undress images for free

Clothoff.io
AI clothes remover

Video Face Swap
Swap faces in any video effortlessly with our completely free AI face swap tool!

Hot Article

Hot Tools

Notepad++7.3.1
Easy-to-use and free code editor

SublimeText3 Chinese version
Chinese version, very easy to use

Zend Studio 13.0.1
Powerful PHP integrated development environment

Dreamweaver CS6
Visual web development tools

SublimeText3 Mac version
God-level code editing software (SublimeText3)

Hot Topics

According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276

According to news from this site on July 3, according to Korean media TheElec, Samsung tried to use molybdenum (Mo) for the first time in the "metal wiring" (metalwiring) of its 9th generation V-NAND. Note from this site: The eight major processes in the semiconductor manufacturing process are: wafer manufacturing oxidation photolithography etching deposition metal wiring testing packaging metal wiring process mainly uses different methods to connect billions of electronic components to form different semiconductors (CPU , GPU, etc.), it can be said to "inject life into semiconductors." Sources say Samsung has introduced five Mo deposition machines from Lam Research, and plans to introduce 20 more pieces of equipment next year. In addition to Samsung Electronics, companies such as SK Hynix, Micron and Kioxia are also

According to a TrendForce survey report, the AI wave has a significant impact on the DRAM memory and NAND flash memory markets. In this site’s news on May 7, TrendForce said in its latest research report today that the agency has increased the contract price increases for two types of storage products this quarter. Specifically, TrendForce originally estimated that the DRAM memory contract price in the second quarter of 2024 will increase by 3~8%, and now estimates it at 13~18%; in terms of NAND flash memory, the original estimate will increase by 13~18%, and the new estimate is 15%. ~20%, only eMMC/UFS has a lower increase of 10%. ▲Image source TrendForce TrendForce stated that the agency originally expected to continue to

According to news from this website on June 18, Samsung Semiconductor recently introduced its next-generation data center-grade solid-state drive BM1743 equipped with its latest QLC flash memory (v7) on its technology blog. ▲Samsung QLC data center-grade solid-state drive BM1743 According to TrendForce in April, in the field of QLC data center-grade solid-state drives, only Samsung and Solidigm, a subsidiary of SK Hynix, had passed the enterprise customer verification at that time. Compared with the previous generation v5QLCV-NAND (note on this site: Samsung v6V-NAND does not have QLC products), Samsung v7QLCV-NAND flash memory has almost doubled the number of stacking layers, and the storage density has also been greatly improved. At the same time, the smoothness of v7QLCV-NAND

According to news from this website on August 9, according to a press release issued by SK Hynix yesterday local time, the company demonstrated a series of new storage products at the FMS2024 Summit, including USF4.1 universal flash memory that has not yet officially released specifications. According to the official website of the JEDEC Solid State Technology Association, the latest UFS specification currently announced is UFS4.0 in August 2022. UFS4.0 specifies a theoretical interface speed of up to 46.4Gbps for each device, and USF4.1 is expected to further improve the transmission rate. ▲JEDECUFS specification page SK Hynix demonstrated two UFS4.1 general-purpose flash memories with capacities of 512GB and 1TB respectively, both based on the 321-layer stacked V91TbTLCNAND flash memory.

News from this site on March 28, according to Taiwanese media DIGITIMES, Yangtze Memory stated at the China Flash Memory Market Summit CFMS2024 that the X3-6070QLC flash memory using third-generation Xtacking technology has achieved a P/E endurance of 4,000 times. Note from this site: Different from the warranty life, consumer-grade original TLC solid-state drives generally have at least 3,000 P/E-level erase and write life in tests. ▲Image source China Flash Memory Market Summit CFMS official, the same below Huo Zongliang, CTO of Yangtze Memory, said that the NAND flash memory industry has passed the most difficult year of 2023 and will enter a rising period this year. It is expected that the total flash memory demand will grow at a compound rate from 2023 to 2027. The rate can reach 21%, and the average capacity of a single device is

According to news from this site on July 31, Korean media ZDNetKorea reported that the QLC version of Samsung Electronics’ V9NAND flash memory has not yet received a mass production license, which has affected the production line construction planning of the Pyeongtaek P4 factory. Samsung Electronics announced in April this year that the 1Tb capacity TLC version of its V9NAND flash memory has achieved mass production, and the corresponding QLC version will enter mass production in the second half of this year. However, until now, Samsung Electronics has not issued a PRA (this site's note: should refer to Production Readiness Approval) mass production-ready license for V9QLCNAND flash memory. QLC flash memory with higher capacity and lower cost is currently the hot spot for AI inference server storage needs. The future of star products is unclear, making the three

According to foreign media reports, Apple will enable a larger storage design on the new iPhone released in 2026, which is expected to be 2TB. In addition, it is reported that Apple will use QLCNAND flash memory, possibly to control costs. 1. Changes in storage capacity According to news, Apple may change the storage capacity on iPhone 16. Instead of triple-level cell (TLC) NAND flash, quad-level cell (QLC) NAND flash will be used on models with storage capacities of 1TB or more. 2. Advantages of QLC flash memory Compared with TLC, the advantage of QLC is that each storage unit can store four bits of data. Store more data than TLC when using the same number of cells, or use fewer cells to store more data
