This website reported on July 3 that according to Korean media The Elec, Samsung tried to use molybdenum (Mo) for the first time in the "metal wiring" of its 9th generation V-NAND.
Metal The wiring process mainly uses different methods to connect billions of electronic components to form different semiconductors (CPU, GPU, etc.), which can be said to "inject life into semiconductors."
Sources saySamsung has introduced five Mo deposition machines from Lam Research Company, and plans to introduce 20 more equipment next year.
In addition to Samsung Electronics, companies such as SK Hynix, Micron and Kioxia are also considering using molybdenum. Unlike tungsten hexafluoride (WF6) used in the existing NAND process, the molybdenum precursor (molybdenum precursor) is solid and must be sublimated directly into a gaseous state at a high temperature of 600°C. This process requires separate deposition equipment. .
Samsung reported in May this year that it had started mass production of the first batch of ninth-generation V-NAND flash memory, with the bit density increased by about 50% compared to the eighth-generation V-NAND.
The ninth-generation V-NAND is equipped with the next-generation NAND flash interface "Toggle 5.1", which can increase data input/output speed by 33%, up to 3.2 gigabits per second (Gbps). In addition to this new interface, Samsung also plans to solidify its position in the high-performance SSD market by expanding support for PCIe 5.0.
The above is the detailed content of Samsung's 9th generation V-NAND metal wiring mass production process is revealed to use molybdenum technology for the first time. For more information, please follow other related articles on the PHP Chinese website!
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