TechInsights: 3D, 4F2 and other new structure DRAM memories are expected to be mass-produced at the 0C node

News from this website on July 26, according to Korean media The Elec, Dr. Choi Jeong-dong from the analysis agency TechInsights said that DRAM memory using innovative structures such as 3D, 4F2, VCT (vertical channel transistor) is expected to reach the 0C nm node Achieve mass production.

0C nm is the 3rd generation 10nm and below node. At present, the most advanced process of the three major DRAM manufacturers is 1b (1β) nm, which is the 6th generation 20~10nm node.

Choi believes that after the next generation of 1c nm, the DRAM memory industry will also experience the 1d nm node before shrinking the nominal process to below 10nm.

Four to five years ago, some people in the industry believed that DRAM memory using a new structure would be available in the 1d~0a nm generation.

But it seems that 3D DRAM, 4F2 DRAM and other technologies are still immature. Even if things go well, mass production will have to wait until at least 0b nm. Taking 3D DRAM as an example, memory samples with 8 and 12-layer stacks are still being tested, and there is still a long way to go before the goal of 60- and 90-layer stacks.

▲The 3D DRAM roadmap previously displayed by Samsung Electronics

Choi said that until the 1b nm process, the HKMG (this site’s note: high dielectric constant (material)/metal gate) process that can reduce leakage current is still available It is only used in some products of GDDR, DDR5, and LPDDR;

And by the 1c nm node, the HKMG process will be widely used in all types of products by Samsung Electronics and SK Hynix.

As for existing DRAM products, 1b nm will take over the title of the process with the highest shipment volume from 1a nm starting from the third quarter;

Among the 1b nm DRAM, Samsung Electronics’ product has the smallest size, and SK Hynix’s slightly smaller Large and Micron are the largest, but the difference is not significant.

The above is the detailed content of TechInsights: 3D, 4F2 and other new structure DRAM memories are expected to be mass-produced at the 0C node. For more information, please follow other related articles on the PHP Chinese website!