Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory

According to news from this website on July 30, Micron announced today (local time) that its ninth-generation (note from this website: 276 layers) 3D TLC NAND flash memory will be mass-produced and shipped.

Micron stated that its G9 NAND has the industry's highest 3.6GB/s I/O transfer rate (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can Better meet the high throughput requirements of data-intensive workloads.

At the same time, Micron’s G9 NAND has 99% and 88% higher write bandwidth and read bandwidth than other solutions on the market respectively. This NAND particle-level advantage will bring benefits to solid-state drives and embedded storage solutions. Improvements in performance and energy efficiency.

In addition, like the previous generation of Micron NAND flash memory, Micron's 276-layer 3D TLC particles adopt a compact package size of 11.5mm × 13.5mm, which can reduce PCB area occupation by 28%, creating the possibility for more design solutions.

▲Three-dimensional structure diagram

Micron executive vice president of technology and products Scott DeBoer said:

The shipment of Micron G9 NAND proves Micron’s strength in process technology and design innovation.

Micron G9 NAND is up to 73% denser than competing products currently on the market, enabling more compact, more efficient storage solutions that benefit both consumers and businesses.

Sumit Sadana, Executive Vice President and Chief Business Officer of Micron, said:

Micron has been the first in the industry to introduce innovative and leading NAND technology for the third consecutive generation. Products integrating Micron G9 NAND deliver significantly better performance than competing products.

Micron G9 NAND will be the foundation for storage innovation, bringing value to customers in all end markets.

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