Home Hardware Tutorial Hardware News Micron launches 2650 solid-state drive: equipped with the latest ninth generation 3D TLC NAND flash memory, 7/6 GB/s sequential read and write

Micron launches 2650 solid-state drive: equipped with the latest ninth generation 3D TLC NAND flash memory, 7/6 GB/s sequential read and write

Jul 31, 2024 am 11:02 AM
SSD Micron

This website reported on July 31 that while Micron released its ninth-generation 276-layer 3D TLC NAND flash memory, it also launched the 2650 solid-state drive equipped with this flash memory. This disk is intended for daily PC and notebook use and is a consumer-grade OEM product.

美光推出 2650 固态硬盘:搭载最新第九代 3D TLC NAND 闪存,7/6 GB/s 顺序读写

Micron 2650 adopts PCIe 4.0×4 interface and is available in three sizes: M.2 2230 / 2242 / 2280. The capacity covers 256GB, 512GB and 1TB, all of which are single-sided designs.

Thanks to its 276-layer 3600MT/s six-plane TLC NAND flash memory B68S, Micron 2650 showed excellent results in the PCMark 10 benchmark test:

Compared with several major original manufacturers' competing products also based on TLC flash memory, the average The running score is up to 38% higher, the average bandwidth is up to 36% higher, and the average response time score is also improved by up to 46%.

美光推出 2650 固态硬盘:搭载最新第九代 3D TLC NAND 闪存,7/6 GB/s 顺序读写

Specifically speaking of nominal parameters, this site organizes the speed and durability of each version of Micron 2650 as follows:

Micron 2650 256GB 512GB 1TB
Sequential reading 5000 7000
Sequential write 2500 4800 6000
Random read 370K 740K 1000K
Random write 500K 1000K
Warranty write capacity 200TBW 300TBW 600TBW
Sequential read and write rate in MB/s, random read and write rate in IOPS

Micron Vice President and General Manager of Client Storage Prasad Alluri said

Micron 2650 SSD is close to the theoretical saturation level of PCIe Gen4. It uses our new G9 NAND, breaking through the value limit that TLC client SSD can achieve.

With up to 38% improvement in PCMark 10 benchmark scores compared to similar solutions, this drive will redefine the user experience for this class of SSDs.

The above is the detailed content of Micron launches 2650 solid-state drive: equipped with the latest ninth generation 3D TLC NAND flash memory, 7/6 GB/s sequential read and write. For more information, please follow other related articles on the PHP Chinese website!

Statement of this Website
The content of this article is voluntarily contributed by netizens, and the copyright belongs to the original author. This site does not assume corresponding legal responsibility. If you find any content suspected of plagiarism or infringement, please contact admin@php.cn

Hot AI Tools

Undresser.AI Undress

Undresser.AI Undress

AI-powered app for creating realistic nude photos

AI Clothes Remover

AI Clothes Remover

Online AI tool for removing clothes from photos.

Undress AI Tool

Undress AI Tool

Undress images for free

Clothoff.io

Clothoff.io

AI clothes remover

Video Face Swap

Video Face Swap

Swap faces in any video effortlessly with our completely free AI face swap tool!

Hot Tools

Notepad++7.3.1

Notepad++7.3.1

Easy-to-use and free code editor

SublimeText3 Chinese version

SublimeText3 Chinese version

Chinese version, very easy to use

Zend Studio 13.0.1

Zend Studio 13.0.1

Powerful PHP integrated development environment

Dreamweaver CS6

Dreamweaver CS6

Visual web development tools

SublimeText3 Mac version

SublimeText3 Mac version

God-level code editing software (SublimeText3)

Samsung to launch PM1753 data center-grade SSD: 14.8 GB/s sequential read, 3.4 million IOPS random read Samsung to launch PM1753 data center-grade SSD: 14.8 GB/s sequential read, 3.4 million IOPS random read Aug 08, 2024 pm 04:40 PM

According to news from this site on August 8, Samsung demonstrated a variety of new SSD products at the 2024 Flash Memory Summit (FMS) - PM1753, BM1743, PM9D3a, PM9E1, and also tested the ninth generation QLCV-NAND, TLCV-NAND and CMM-D –DRAM, CMM-HTM, CMM-HPM, and CMM-BCXL technologies were introduced. BM1743 uses QLC flash memory with a capacity of up to 128TB, a continuous read speed of 7.5GB/s, a write speed of 3.5GB/s, a random read of 1.6 million IOPS, and a write of 45,000 IOPS. It adopts a 2.5-inch form factor and a U.2 interface, and is idle Power consumption is reduced to 4W, and after subsequent OTA updates, only

Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory Jul 31, 2024 am 08:05 AM

According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276

Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year Mar 22, 2024 pm 08:16 PM

This site reported on March 21 that Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers. Micron said that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times more wafers than standard DDR5, and it is expected that as performance improves and packaging complexity intensifies, in the future HBM4 This ratio will further increase. Referring to previous reports on this site, this high ratio is partly due to HBM’s low yield rate. HBM memory is stacked with multi-layer DRAM memory TSV connections. A problem with one layer means that the entire

Esidak launches MB204MP-B four-bay M.2 solid-state drive box: supports PCIe 5.0, 2399 yuan Esidak launches MB204MP-B four-bay M.2 solid-state drive box: supports PCIe 5.0, 2399 yuan Jul 22, 2024 am 11:55 AM

This website reported on July 22 that ICEDOCK launched the ExpressSlotMB204MP-B four-bay M.2 solid-state drive extraction box on the 19th of this month. The extraction box adopts the shape of a PCIeAIC add-on card, requires PCIe6Pin auxiliary power supply, has a three-dimensional dimension of 204.5×21.59×126.9 (mm), supports the PCIe5.0 protocol, and can provide 16GB/s PCIe5.0×4 full-speed bandwidth for each solid-state drive. . Esidak ExpressSlotMB204MP-B SSD extraction box is compatible with M.22230/2242/2260/2280 SSDs. However, the thickness of each side of these SSDs must not exceed 1.5mm.

Western Digital launches PC SN5000S NVMe SSD: QLC flash memory, up to 2TB capacity Western Digital launches PC SN5000S NVMe SSD: QLC flash memory, up to 2TB capacity Mar 15, 2024 pm 12:52 PM

According to news from this site on March 14, Western Digital launched the PCSN5000SNVMe solid-state drive. This product is equipped with BICS6 (162-layer) QLC flash memory and is a product for OEM manufacturers. ▲Photos of Western Digital PCSN5000S solid-state drive. Specifically, PCSN5000S uses PCIeGen4x4 interface, NVMe2.0 protocol, and is equipped with Western Digital’s latest self-developed main control. It has optional M.22280/2230 specifications and three capacity versions of 512GB/1TB/2TB. Support nCache4.0 dynamic SLC caching technology. In terms of parameters, the maximum sequential read speed of the three capacities of PCSN5000S is 6000MB/s, and the maximum sequential write rate is 4

Phison comprehensively showcases Pascari enterprise-class SSD products, including 100DWPD ultra-high endurance model Phison comprehensively showcases Pascari enterprise-class SSD products, including 100DWPD ultra-high endurance model Aug 07, 2024 pm 06:58 PM

According to news from this site on August 7, Phison fully demonstrated its Pascari enterprise-class solid-state drive product line at the FMS2024 Summit. This product line covers 5 major categories and is targeted at various enterprise-level and data center applications. Here is a brief introduction on this site: X Series - Best Performance Phison's X Series enterprise-class SSDs are "designed for extreme writing requirements." In addition to the first X200 family, Phison also launched two PCIe 4.0 products, X100P and X100E, respectively 1DWPD and 3DWPD, with maximum capacities of 32TB Note 1. Both X100P and

SK Hynix demonstrates Platinum P51 SSD: sequential read peak 13500 MB/s SK Hynix demonstrates Platinum P51 SSD: sequential read peak 13500 MB/s Mar 20, 2024 pm 02:36 PM

According to news from this website on March 20, SK Hynix recently attended the NVIDIA GTC2024 conference and demonstrated the first Gen5NVMe solid-state drive series for the consumer market-Platinum P51M.22280NVMeSSD. PlatinumP51 is similar to GoldP31 and PlatinumP41. It uses a self-designed SSD master control, but the main highlight is the use of PCIeGen5 and 238-layer TLCNAND flash memory. Note from this site: Hynix acquired SSD master control manufacturer LAMD in 2012, giving it the ability to design its own master control. SK Hynix said at the booth that Platinum P51 will be launched in 500GB, 1TB and 2

Samsung introduces BM1743 data center-grade SSD: equipped with v7 QLC V-NAND and supports PCIe 5.0 Samsung introduces BM1743 data center-grade SSD: equipped with v7 QLC V-NAND and supports PCIe 5.0 Jun 18, 2024 pm 04:15 PM

According to news from this website on June 18, Samsung Semiconductor recently introduced its next-generation data center-grade solid-state drive BM1743 equipped with its latest QLC flash memory (v7) on its technology blog. ▲Samsung QLC data center-grade solid-state drive BM1743 According to TrendForce in April, in the field of QLC data center-grade solid-state drives, only Samsung and Solidigm, a subsidiary of SK Hynix, had passed the enterprise customer verification at that time. Compared with the previous generation v5QLCV-NAND (note on this site: Samsung v6V-NAND does not have QLC products), Samsung v7QLCV-NAND flash memory has almost doubled the number of stacking layers, and the storage density has also been greatly improved. At the same time, the smoothness of v7QLCV-NAND

See all articles