Paving the way for 1000-layer NAND flash memory manufacturing, Lam launches a new generation of low-temperature dielectric etching technology Lam Cyro 3.0

According to news from this website on August 1, Lam Group Lam Research yesterday announced the launch of Lam Cyro 3.0, the third generation low-temperature dielectric etching technology for 3D NAND flash memory manufacturing. "Lam Cryo 3.0 paves the way for (our) customers to achieve 1000-layer 3D NAND," said Sesha Varadarajan, Senior Vice President of Lam's Global Products Division. Lam low-temperature etch has been used in the production of 5 million wafers, and our latest technology is a breakthrough in 3D NAND production. It can create high aspect ratio (High Aspect Ratio) graphic features with angstrom-level precision while reducing environmental impact, and the etching speed is more than twice that of traditional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome critical NAND manufacturing barriers in the AI ​​era. In the production of existing 3D NAND, layers of memory cells are connected by long, thin vertical vias that run from the top to the bottom of the device. During the channel construction process, even slight atomic-level errors in graphic features and target contours may have a negative impact on the electrical performance of new storage products and may affect the yield.

Lam Cryo 3.0 combines a high-energy closed plasma reactor, an operating temperature well below 0℃ and a new chemical etching substance, which can etch channels with an aspect ratio of up to 50:1 and a depth of 10μm, while Feature critical dimension deviation from top to bottom is less than 0.1%.

In addition, compared with traditional dielectric processes, the etching speed of Lam Cryo 3.0 technology is 2.5 times that of the former, energy consumption is reduced by 40%, and emissions are reduced by 90%.

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