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Samsung Electronics accused of infringing two Harvard University patents in microprocessor and memory manufacturing
Samsung Electronics accused of infringing two Harvard University patents in microprocessor and memory manufacturing
News from this website on August 7, based on reports from Bloomberg Law and Reuters, Harvard University submitted an indictment to the U.S. District Court for the Eastern District of Texas on Monday, accusing Samsung Electronics of infringing two counts of infringement in the fields of microprocessors and memory manufacturing. patent. This website learned from the indictment that Professor Roy G. Gordon of the Department of Chemistry at Harvard University is the inventor of these two patents. Harvard University is the assignee of these patents and has complete rights to the corresponding patents.
▲Samsung office facilities in the United States
These two patents involve deposition methods of cobalt and tungsten-containing films, respectively titled "Cobalt nitride layer for copper interconnects and method of forming the same" and "Nitridation Vapor deposition of tungsten," Harvard University said. "This film is critical to critical components in many products, including computers and cell phones."
Harvard University believes that Samsung Electronics has infringed Harvard University's patents related to the preparation of cobalt nitride films in the process of OEM Qualcomm Snapdragon 8 Gen 1 processors, etc., involving Samsung S22 smartphones and other products.
When Samsung produced LPDDR5X and other memories, it implemented every element of at least one claim in Harvard University's tungsten layer deposition patent without authorization. Samsung's Galaxy Z Flip5 folding screen mobile phone uses the relevant LPDDR5X memory product.
The above is the detailed content of Samsung Electronics accused of infringing two Harvard University patents in microprocessor and memory manufacturing. For more information, please follow other related articles on the PHP Chinese website!
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