Samsung to launch PM1753 data center-grade SSD: 14.8 GB/s sequential read, 3.4 million IOPS random read

According to news from this site on August 8, Samsung demonstrated a number of new SSD products at the 2024 Flash Memory Summit (FMS) - PM1753, BM1743, PM9D3a, PM9E1, and also tested the ninth generation QLC V-NAND, TLC V-NAND and CMM-D – DRAM, CMM-H TM, CMM-H PM, CMM-B CXL technologies are introduced.

BM1743 uses QLC flash memory with a capacity of up to 128TB, a continuous read speed of 7.5 GB/s, a write speed of 3.5 GB/s, a random read of 1.6 million IOPS, and a write of 45,000 IOPS. It adopts a 2.5-inch form factor and U.2 interface, the idle power consumption is reduced to 4W, and even only 2W is needed after subsequent OTA updates.

PM1753 is faster, with a continuous read speed of 14.8 GB/s and a write speed of 11 GB/s. It promises to provide 3.4 million IOPS random read performance and 600,000 write IOPS. The maximum capacity is 32 TB. It provides U .2 and E3.S versions are available, other details have not been announced yet.

Samsung PPT also mentioned an SSD with a capacity of 1 PB, but the expected release date is 2035. In addition, SSDs with a capacity of 256 TB will be launched between 2024~2026; 512 TB will be launched between 2027~2029 and are only planned for EDSFF-E3.L data centers. As for consumer-grade M.2, we'll have to wait until at least 2027 to get a 16 TB version from Samsung.

▲Silwan Chang, vice president of Samsung Electronics and head of the advanced development team, delivered a keynote speech

This site noticed that Samsung Electronics also held the 2024 Open Compute China Summit (OCP) in Beijing today China) mentioned a number of products, such as PM1743a (32TB/64TB) launched in late 2023, as well as data center-level PM9D3a, and PM1753 based on ninth-generation VNAND technology.

▲Samsung Semiconductor booth showcased innovative large-capacity storage product PM9D3a

According to reports, as Samsung’s industry’s first 8-channel PCIe Gen5 SSD, PM9D3a breaks through the limitations of the existing flash memory hierarchy and achieves up to 50K per TB. IOPS random write performance, and the first to support FDP technology, has been introduced and tested in major data centers in the United States and China.

Samsung Electronics’ upcoming new-generation PCIe Gen5 SSD PM1753 has a 1.6-fold improvement in sequential write performance and a 1.3- and 1.7-fold improvement in random read and write speeds compared to the previous generation.

Samsung said that while pursuing technological breakthroughs, the importance of AI processing power consumption cannot be ignored. Taking the PM1753 based on TLC technology as an example, its sequential write energy efficiency under AI workloads is 1.7 times higher than the previous generation, and the energy efficiency of random I/O operations in traditional servers is also improved by 1.6 times. AI applications must not only optimize power consumption during I/O operations, but also reduce SSD power consumption in standby mode. The idle power consumption of PM1753 has been reduced to 4W, and the next generation product plans to compress the idle power consumption to 2W to help data centers achieve energy conservation and emission reduction goals. The PM1753 promises to be an excellent solution for generative AI server applications.

At the end of the speech, Samsung also introduced the HBM3E memory product that is currently undergoing customer testing. It is expected to have a speed of up to 9.8Gbps and a bandwidth of no less than 1TB/s; and the next generation HBM4 product is expected to be introduced to everyone in 2025. At the same time, Samsung also mentioned the industry's first SoC (processor)-based CMM product CMM-H, including CMM-PM and CMM-H TM, which respectively address data persistence and virtual machine migration needs, providing more powerful solutions for the AI ​​era. memory solution.

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