It is reported that Samsung Electronics has confirmed investment in the 1cnm DRAM memory production line of Pyeongtaek P4 factory and aims to put it into operation in June next year.

According to this site’s news on August 12, Korean media ETNews reported that Samsung Electronics has internally confirmed its investment plan to build a 1c nm DRAM memory production line at the Pyeongtaek P4 factory. The production line is targeted to be put into operation in June next year. Pyeongtaek P4 is an integrated semiconductor production center divided into four phases. In the early planning, the first phase was for NAND flash memory, the second phase was for logic foundry, and the third and fourth phases were for DRAM memory. Samsung has introduced DRAM production equipment in the first phase of P4, but has shelved the construction of the second phase. 1c nm DRAM is the sixth generation of 20~10 nm memory technology, and each company’s 1c nm (or corresponding 1γ nm) products have not yet been officially released. Korean media reported that Samsung Electronics plans to start 1c nm memory production at the end of this year.

▲ Samsung Pyeongtaek Factory According to previous reports on this site, Samsung Electronics is considering using 1c nm DRAM die for the HBM4 memory to be launched in the second half of next year to improve the energy efficiency competitiveness of HBM4 products with a more advanced DRAM process and catch up with HBM SK hynix, the leader in the field.
Considering that HBM memory’s consumption of DRAM wafers is much higher than that of traditional memory, Pyeongtaek P4’s construction of a 1c nm DRAM production line is also preparing for the production needs of HBM4.

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