South Korean semiconductor giant SK Hynix announced a major breakthrough on August 9 and successfully released a new 321-layer 1Tb TLC NAND flash memory, making it the first company in the world to officially develop more than 300-layer NAND flash memory
SK Hynix has made great progress in the field of NAND flash memory. Their breakthrough technological achievement is 321-layer 1Tb TLC NAND. Compared with the previous generation of 238-layer 512Gb NAND, the efficiency has increased by an astonishing 59%. By increasing the number and layers of memory cells in each chip, SK Hynix has successfully achieved greater storage capacity, not only increasing the storage capacity of a single chip, but also effectively increasing the yield of chips on each wafer
SK Hynix plans to start mass production of this 321-layer 1Tb TLC NAND flash memory in the first half of 2025 to provide the market with larger capacity and higher efficiency storage solutions.
According to the editor’s understanding, in addition to launching the breakthrough 321-layer 1Tb TLC NAND flash memory, SK Hynix has also launched next-generation NAND products that meet different needs. Among them, the enterprise-class solid-state drive (eSSD) adopts the PCIe 5 (Gen5) interface to provide faster data transmission capabilities for enterprise-class users. In addition, the field of mobile devices will also usher in the highlights of UFS 4.0, which will bring higher-speed flash storage performance to mobile phones and other devices. SK Hynix said that the company will continue to improve existing technologies and actively invest in research and development. A generation of products, including PCIe 6.0 and UFS 5.0 products that adapt to future market needs, to lead industry development. These innovative initiatives will further consolidate SK hynix’s leadership position in the semiconductor field and make important contributions to the development of global science and technology
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