Samsung Electronics plans to launch dual-layer stack V-NAND flash memory technology with more than 300 layers next year

According to the latest reports, Samsung Electronics plans to launch 9th generation V-NAND flash memory products next year. This new product will use a dual-layer stack architecture with more than 300 layers, bringing a breakthrough in the field of storage technology

Samsung plans to introduce a dual-layer stack architecture to surpass the competition in terms of technological advancements Opponent SK Hynix. According to reports, SK Hynix plans to start mass production of 321-layer NAND flash memory with a three-layer stack architecture in the first half of 2025. However, as early as 2020, Samsung has successfully produced the 7th generation V-NAND flash memory chip

This innovative move is expected to significantly increase storage density, thereby helping to reduce the cost of solid-state drives manufacturing costs, providing consumers with more cost-effective storage solutions. Samsung's dual-layer stack architecture technology is a new stack built on the existing 3D NAND stack. This approach not only increases yields, but also uses resources more efficiently

According to the editor’s understanding, SK Hynix adopts a three-layer stack architecture that is different from its competitors. This architecture creates three different sets of layers on top of a 3D NAND layer. Although this can increase output, it will also increase the production steps and the use of raw materials. Industry insiders revealed to the Seoul Economic Daily that Samsung is launching the 9th generation 3D After NAND, it is expected to adopt a three-layer stack architecture in the 10th generation products, which is expected to reach 430 layers. This technology choice not only ensures higher throughput, but also copes with the raw material and cost pressures that may arise when exceeding 400 layers.

At the "2022 Samsung Technology Day" in 2022, Samsung proposed ambitious long-term goals, planning to bring 3D The number of NAND layers has been increased to 1,000. This goal shows Samsung's persistent pursuit of the development of future storage technology.

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