News on September 28, as the technology industry continues to progress, competition for high-performance memory is also intensifying. The latest news shows that Micron Technology (Micron Technology has officially launched the new HBM3E memory, which will compete with SK Hynix's HBM3E memory. Both companies are committed to providing high-bandwidth memory solutions to meet the needs of high-performance computing and graphics processing.
Micron’s HBM3E memory claims to be able to achieve a transfer speed of 1.2 TB per second, which is comparable to SK Hynix’s products. HBM(High Bandwidth Memory) vertical connection technology of memory has shown great potential in the field of data processing. The application of this technology can significantly increase the data transmission speed, which is very important for applications that require large-scale data processing.
Micron’s HBM3E memory adopts an eight-layer layout, with the capacity of each stack reaching 24GB. At the same time, it also uses advanced 1β technology, which means the manufacturing process is more advanced and is expected to provide higher performance and efficiency. This product has begun delivering samples to customers such as NVIDIA, and orders are expected to be received next year. In addition, Micron also emphasized that one of the competitive advantages of HBM3E memory is its lower cost. This will bring more choices to manufacturers and end users, reduce the manufacturing cost of the product, or hopefully reduce the price of the final product. As Micron is about to launch commercial shipment plans for HBM3E memory, they are actively pursuing Product certification to meet the needs of partners such as NVIDIA. This competition will stimulate innovation and progress in the memory market and bring more high-performance memory choices to consumers
According to the editor’s understanding, HBM3E memory, as the fifth-generation extended version of HBM memory, represents The latest advances in memory technology will provide more powerful support for high-performance applications in various fields. In the future, we can expect to see more intense competition between these two memory products in the market, bringing more innovation and progress to the technology industry.
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