Intel will be the first company to introduce next-generation High-NA EUV lithography machines this year

According to news from this site on October 2, Intel said last week that it has begun mass production using EUV lithography machines at its $18.5 billion Irish factory, calling it a "milestone moment."

Ann Kelleher, Intel’s general manager of technology development, said that Intel plans to introduce a next-generation high numerical aperture (High-NA) EUV lithography machine for the first time this year. Previously, Intel had stated that High-NA technology was only used for equipment development and verification, and planned to officially put it into production after the 18A node. The American company said that with the High-NA EUV lithography machine, theoretically It can play a key role in Intel's journey to achieve its "five-generation process in four years."

Ann Kelleher said they are currently on track to achieve this goal, having completed two manufacturing processes, while a third process is "coming quickly", and the last two processes have achieved Very good progress.

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ASML CEO Peter Wennink told Reuters last month that although suppliers There have been some obstacles, but the company will still deliver the High NA EUV machine before the end of this year in accordance with the previously set plan.

Kelleher said Intel expects to receive the first batch of high-numerical aperture extreme ultraviolet lithography machines (High-NA EUV) in Oregon later this year, and that Intel will be the first chip to receive this equipment. Manufacturer

ASML stated that a High-NA EUV equipment is about the same size as a truck, and each equipment exceeds US$150 million (note on this site: currently about 1.095 billion yuan), which can meet the needs of various chip manufacturing Based on the needs of manufacturers, smaller and more advanced chips can be manufactured within the next decade.

Currently, the most advanced chips use 4/5 nanometer-level processes. In the second half of the year, Samsung and TSMC will also be able to mass-produce 3nm technology. For Twinscan NXE:3400C and similar systems using ASML EUV lithography, they typically have 0.33 NA (numerical aperture) optics, capable of providing 13 nanometer resolution

According to the current situation , this resolution size is enough for the single mode of 7nm/6nm node (36nm~38nm) and 5nm (30nm~32nm). But with the emergence of pitches below 30nm (nodes beyond the 5nm level), double exposure technology may be needed to achieve 13nm resolution, which will become the mainstream method in the next few years

For the post-3nm era, ASML and its partners are developing a new EUV lithography machine-Twinscan EXE:5000 series. This series of machines will have a 0.55 NA (high NA) lens with a resolution of 8nm, thereby enabling lithography at the 3 nm node and above. Reduce processes as much as possible, reduce costs and improve yield.

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