Samsung plans to mass-produce ninth-generation V-NAND flash memory with more than 300 layers early next year, claiming to have the highest number of layers in the industry

According to news from this site on October 19, Samsung is the world’s largest NAND flash memory supplier and has ambitious plans for the development of V-NAND (what Samsung calls 3D NAND). This week Samsung shared some relevant information. information. The company confirmed that it is on track to produce its ninth-generation V-NAND flash memory with more than 300 layers, saying it will be the most layer-count 3D NAND in the industry.

“The ninth-generation V-NAND is based on a double-layer structure, with the number of layers reaching the highest level in the industry, and will begin mass production early next year. Lee Jung-Bae, president of Samsung Electronics and head of its memory division, wrote in a blog post.

This site noticed that in August there was news that Samsung was developing a ninth-generation V-NAND with more than 300 layers and would continue to use the double-layer technology first used by Samsung in 2020. And Samsung now says its 3D NAND will have more effective layers than its competitors. We currently know that SK Hynix’s next-generation 3D NAND will have 321 layers, so Samsung’s ninth-generation V-NAND should have even more layers.

The increase in layer count will allow Samsung to increase the storage density of its 3D NAND devices. The company expects that future flash memory types will not only increase storage density but also improve performance.

"Samsung is also working on next-generation value-creating technologies, including a new structure that can maximize the input/output (I/O) speed of V-NAND." Lee Jung-bae said.

It’s not yet known how Samsung’s ninth-generation V-NAND will perform in terms of performance, but it is believed that the company will use this memory to produce its upcoming solid-state drives, possibly using the PCIe Gen5 interface .

As for longer-term technology innovation, Samsung is committed to minimizing cell interference, reducing height and maximizing the number of vertical layers, which will enable it to achieve the smallest cell size in the industry. These innovations will play a key role in advancing Samsung's vision of 3D NAND with over 1,000 layers and highly differentiated memory solutions.

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