Technology peripherals
It Industry
Minister of Commerce Wang Wentao met with Micron President and CEO Sanjay Mehrotra
Minister of Commerce Wang Wentao met with Micron President and CEO Sanjay Mehrotra
According to the official website of the Ministry of Commerce, Minister Wang Wentao met with Micron Technology’s President and CEO Sanjay Mehrotra and his delegation on November 1st
Wang Wentao said that China will unswervingly promote high-level opening up to the outside world, constantly optimize the foreign investment environment, and provide service guarantees for foreign-invested enterprises. Welcome Micron Technology to continue to take root in the Chinese market and achieve better development while complying with Chinese laws and regulations.
Sanjay Mehrotra introduced the business development of Micron Technology, expressed his willingness to continue to expand investment in China.
According to this site’s previous reports, the Cyberspace Administration of China issued a notice on its official website on May 21, stating that Micron’s products sold in China failed to pass network security review.
Micron announced in June this year that plans to invest more than 4.3 billion yuan in the Xi'an packaging and testing factory in the next few years to build new factories and introduce more new and high-tech high-performance packaging and testing equipment to better meet the needs of Chinese customers. The investment project will also create an additional 500 jobs, bringing Micron's total number of employees in China to more than 4,500.
Advertising Statement: This article contains external jump links, including but not limited to hyperlinks, QR codes, passwords, etc., in order to provide more information and save screening time. These links are for reference only and all articles on this site carry this statement
The above is the detailed content of Minister of Commerce Wang Wentao met with Micron President and CEO Sanjay Mehrotra. For more information, please follow other related articles on the PHP Chinese website!
Hot AI Tools
Undresser.AI Undress
AI-powered app for creating realistic nude photos
AI Clothes Remover
Online AI tool for removing clothes from photos.
Undress AI Tool
Undress images for free
Clothoff.io
AI clothes remover
Video Face Swap
Swap faces in any video effortlessly with our completely free AI face swap tool!
Hot Article
Hot Tools
Notepad++7.3.1
Easy-to-use and free code editor
SublimeText3 Chinese version
Chinese version, very easy to use
Zend Studio 13.0.1
Powerful PHP integrated development environment
Dreamweaver CS6
Visual web development tools
SublimeText3 Mac version
God-level code editing software (SublimeText3)
Hot Topics
Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory
Jul 31, 2024 am 08:05 AM
According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276
Micron: HBM memory consumes 3 times the wafer volume, and production capacity is basically booked for next year
Mar 22, 2024 pm 08:16 PM
This site reported on March 21 that Micron held a conference call after releasing its quarterly financial report. At the conference, Micron CEO Sanjay Mehrotra said that compared to traditional memory, HBM consumes significantly more wafers. Micron said that when producing the same capacity at the same node, the current most advanced HBM3E memory consumes three times more wafers than standard DDR5, and it is expected that as performance improves and packaging complexity intensifies, in the future HBM4 This ratio will further increase. Referring to previous reports on this site, this high ratio is partly due to HBM’s low yield rate. HBM memory is stacked with multi-layer DRAM memory TSV connections. A problem with one layer means that the entire
Analyst: Micron's non-volatile NVDRAM memory has many highlights, but is unlikely to be commercialized
Jan 30, 2024 pm 06:30 PM
According to news from this site on January 29, Micron disclosed its 32Gb3DNVDRAM (non-volatile DRAM) research and development results at the IEEEIEDM conference in late 2023. However, according to information obtained by foreign media Blocks&Files from two industry analysts interviewed, this breakthrough new memory is basically unlikely to be commercialized and mass-produced, but the technological progress it demonstrates is expected to appear in future memory products. . Micron's NVDRAM memory is based on the principle of ferroelectricity (note from this site: it has spontaneous polarization, and the polarization direction can be reversed under an external electric field). It can achieve high performance close to DRAM while having non-volatility similar to NAND flash memory. Durable and low latency. This new type of memory uses double-layer 3D stacking and has a capacity of 32Gb.
Sharing practical Word skills: 2 tricks to easily solve the layout of multiple pictures!
Apr 01, 2023 am 10:57 AM
Multi-image formatting is one of the common scenarios when editing documents in Word. Almost everyone will encounter it, and it is still a big problem for many people. When the number of pictures increases, many people don’t know how to place the pictures. How to quickly and efficiently create a group of pictures? Because I have not mastered the systematic routine skills, each production takes a lot of time and cannot produce satisfactory results. Today I will teach you 2 tips to easily solve the problem of multi-image layout!
Micron launches 2650 solid-state drive: equipped with the latest ninth generation 3D TLC NAND flash memory, 7/6 GB/s sequential read and write
Jul 31, 2024 am 11:02 AM
This website reported on July 31 that while Micron released its ninth-generation 276-layer 3DTLC NAND flash memory, it also launched the 2650 solid-state drive equipped with this flash memory. This disk is intended for daily PC and notebook use and is a consumer-grade OEM product. Micron 2650 adopts PCIe4.0×4 interface and is available in three sizes: M.22230/2242/2280. The capacity covers 256GB, 512GB and 1TB, all of which are single-sided designs. Thanks to its 276-layer 3600MT/s six-plane TLCNAND flash memory B68S, Micron 2650 showed excellent results in the PCMark10 benchmark test: its average running score is up to 38 points higher than that of several major original manufacturers' competitors that are also based on TLC flash memory.
Micron's 1-gamma process memory is expected to be mass-produced in Taiwan in the first half of 2025
Sep 14, 2023 pm 08:29 PM
This site reported on September 4 that according to Taiwan's "Central News Agency", Lu Donghui, chairman of Micron Taiwan, said that as many as 65% of Micron's DRAM products are produced in Taiwan. Among them, the Taiwanese and Japanese teams jointly developed a new generation of 1-gamma process to It will be mass-produced in the Taichung factory in the first half of 2025. This is Micron’s first generation using extreme ultraviolet (EUV) process technology. It is reported that Micron currently only has an EUV manufacturing plant in Taichung. The 1-gamma process will be mass-produced in the Taichung plant first, and the Japanese plant will also introduce EUV equipment in the future. Lu Donghui emphasized that Taiwan and Japan are very important manufacturing centers for Micron. As many as 65% of Micron's dynamic random access memory (DRAM) products are produced in Taiwan; after the Japanese factory started mass production of 1-b in October last year
Micron: Intelligent LPCAMM2 memory will be launched in the first half of this year, and laptop users can upgrade by themselves
Jan 19, 2024 am 10:21 AM
According to news from this site on January 19, laptop onboard memory has been criticized by many users. It is indeed difficult to use replaceable memory on thin and light notebooks that cost a lot of space. To this end, major manufacturers are developing a kind of LPCAMM memory, which is expected to overcome the shortcomings of LPDDR onboard memory and So-DIMM traditional slot memory. Micron launched the industry's first standard low-power compressed add-on memory module (LPCAMM2) at CES2024. This module uses LPDDR5X memory with capacities ranging from 16GB to 64GB. Micron said that LPCAMM2 memory modules are now sampling and mass production is planned for the first half of 2024. Micron will also provide LPCAMM2 memory products to end customers to enable
Sequential reads up to 26GB/s! Micron launches industry's first eco-friendly PCIe 6.0 data center SSD
Aug 06, 2024 pm 06:56 PM
According to news from this site on August 6, Micron announced on the 5th local time in Santa Clara, California, the United States, that it had successfully developed the industry's first PCIe6.0 data center solid-state drive for ecological support. The SSD has a sequential read rate of up to 26GB/s. The 9550 series PCIe5.0 data center solid-state drives released by Micron on July 23 have a sequential read rate of 14GB/s. In other words, Micron’s new generation of products has improved by 85.7% in sequential reading. As one of the signs of launching the PCIe6.0 ecosystem, Micron will showcase its new PCIe6.0 data center solid-state drive products at the FMS2024 Summit to be held in Santa Clara from August 6th to 8th local time. In addition, Micron Senior Vice President Raj Nala
