What triggered heated discussions among the industry and consumers was Apple’s hardware upgrade decision. It is reported that Apple plans to use relatively slow four-layer cell (QLC) NAND flash memory in the upcoming iPhone 16 series to replace the traditional three-layer cell (TLC) NAND flash memory. This decision is particularly relevant for models with storage capacities of 1TB or more. The impact of this decision has been widely discussed. Some people worry that the slower speed of four-layer cell flash memory may affect the performance of mobile phones, while others believe that such an upgrade can provide greater storage capacity to meet the growth of users' demand for mobile phone storage. Apple has not yet made an official response to this matter.
This change is mainly due to the technical characteristics of QLC flash memory. Compared with TLC flash memory, each storage unit of QLC flash memory can store more data bits, so a larger storage capacity can be achieved with the same number of storage units, or fewer storage units can be used to achieve the same storage capacity. . The introduction of this technology helps Apple reduce production costs and improve storage space utilization efficiency.
The editor understands that the write endurance of QLC flash memory may be reduced, and the read data is also susceptible to noise interference, resulting in an increase in the bit error rate. This means that if the iPhone 16 series uses QLC flash memory, some users of the high-capacity version may encounter slower data writing speeds.
Apple’s decision caused different reactions from the market and consumers. Some people believe that this is a compromise made by Apple between balancing profits and costs, while others are worried that this may have a negative impact on the performance and user experience of the iPhone 16 series. In any case, these questions still need to be answered after the new iPhone is officially released and market tested.
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