Home Technology peripherals It Industry Sources say Western Digital-KioXia merger talks are expected to start again in late April

Sources say Western Digital-KioXia merger talks are expected to start again in late April

Feb 27, 2024 pm 06:46 PM
flash memory nand Western Digital kioxia

According to the Japanese media "Asahi Shimbun", merger negotiations between Western Digital and Kioxia, two important companies in the NAND flash memory field, are expected to start again at the end of April.

According to past reports on this website, Western Digital has been negotiating a merger with Kioxia since 2021. However, it is reported that the latest round of merger negotiations between the two parties ended in failure due to the obstruction of SK Hynix, which holds shares in Kioxia. Later, Western Digital announced plans to spin off its flash memory business and plans to complete the move in the second half of this year.

Referring to a survey report by industry analyst firm TrendForce, in the third quarter of 2023, Western Digital's NAND flash memory market share reached 16.9%, while Kioxia's was 14.5%. The total of both parties was as high as 31.4%. It is comparable to industry leader Samsung Electronics and higher than the 20.2% combined by SK Hynix and its subsidiary Solidigm.

消息称西部数据-铠侠合并谈判有望 4 月下旬再度启动
▲ Source: TrendForce TrendForce
According to a person familiar with the matter, Western Digital announced its partnership with Kioxia at the end of October last year merger talks have been terminated. To avoid accusations of insider trading, Western Digital decided to allow a gap of about half a year. It is reported that once this interval is over, the two sides will restart negotiations in April.

The above is the detailed content of Sources say Western Digital-KioXia merger talks are expected to start again in late April. For more information, please follow other related articles on the PHP Chinese website!

Statement of this Website
The content of this article is voluntarily contributed by netizens, and the copyright belongs to the original author. This site does not assume corresponding legal responsibility. If you find any content suspected of plagiarism or infringement, please contact admin@php.cn

Hot AI Tools

Undresser.AI Undress

Undresser.AI Undress

AI-powered app for creating realistic nude photos

AI Clothes Remover

AI Clothes Remover

Online AI tool for removing clothes from photos.

Undress AI Tool

Undress AI Tool

Undress images for free

Clothoff.io

Clothoff.io

AI clothes remover

AI Hentai Generator

AI Hentai Generator

Generate AI Hentai for free.

Hot Article

R.E.P.O. Energy Crystals Explained and What They Do (Yellow Crystal)
3 weeks ago By 尊渡假赌尊渡假赌尊渡假赌
R.E.P.O. Best Graphic Settings
3 weeks ago By 尊渡假赌尊渡假赌尊渡假赌
R.E.P.O. How to Fix Audio if You Can't Hear Anyone
3 weeks ago By 尊渡假赌尊渡假赌尊渡假赌
WWE 2K25: How To Unlock Everything In MyRise
4 weeks ago By 尊渡假赌尊渡假赌尊渡假赌

Hot Tools

Notepad++7.3.1

Notepad++7.3.1

Easy-to-use and free code editor

SublimeText3 Chinese version

SublimeText3 Chinese version

Chinese version, very easy to use

Zend Studio 13.0.1

Zend Studio 13.0.1

Powerful PHP integrated development environment

Dreamweaver CS6

Dreamweaver CS6

Visual web development tools

SublimeText3 Mac version

SublimeText3 Mac version

God-level code editing software (SublimeText3)

Fix: Rufus error when formatting on Windows 11 Fix: Rufus error when formatting on Windows 11 Apr 28, 2023 pm 05:28 PM

Rufus is an excellent tool for creating bootable installation media, and many people use it to perform a clean installation of Windows on their PC. However, many users have reported Rufus errors on Windows 11. These errors will prevent you from creating installation media, thereby preventing you from installing Windows 11 or any other operating system. Fortunately, fixing these problems is relatively simple, and in today's tutorial, we'll show you the best methods you can use to fix this problem. Why do I get an undetermined error when formatting in Rufus on Windows 11? There are many reasons for this, and in most cases, it's just a software glitch that causes the problem. You can pass

Commands to install BalenaEtcher on Windows 11 Commands to install BalenaEtcher on Windows 11 Apr 19, 2023 pm 05:46 PM

Steps to Install BalenaEtcher on Windows 11 Here we will show the quick way to install BalenaEthcer on Windows 11 without visiting its official website. 1. Open a command terminal (as an administrator), right-click the Start button and select Terminal (Admin). This will open a Windows Terminal with administrative rights to install software and perform other important tasks as superuser. 2. Install BalenaEtcher on Windows 11 Now, on your Windows terminal, just run Using the default Windows package manager

Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory Industry's highest transfer rate of 3.6GB/s, Micron announces mass production of ninth-generation 276-layer TLC NAND flash memory Jul 31, 2024 am 08:05 AM

According to news from this site on July 30, Micron announced today (local time) that its ninth generation (site note: 276 layers) 3DTLC NAND flash memory will be mass-produced and shipped. Micron said that its G9NAND has the industry's highest I/O transfer rate of 3.6GB/s (i.e. 3600MT/s flash memory interface rate), which is 50% higher than the existing competing products of 2400MT/s, and can better meet the needs of data-intensive workloads. High throughput requirements. At the same time, Micron's G9NAND is 99% and 88% higher than other solutions on the market in terms of write bandwidth and read bandwidth respectively. This NAND particle-level advantage will bring performance and energy efficiency to solid-state drives and embedded storage solutions. improvement. In addition, like previous generations of Micron NAND flash memory, Micron 276

Samsung's 9th generation V-NAND metal wiring mass production process is revealed to use molybdenum technology for the first time Samsung's 9th generation V-NAND metal wiring mass production process is revealed to use molybdenum technology for the first time Jul 03, 2024 pm 05:39 PM

According to news from this site on July 3, according to Korean media TheElec, Samsung tried to use molybdenum (Mo) for the first time in the "metal wiring" (metalwiring) of its 9th generation V-NAND. Note from this site: The eight major processes in the semiconductor manufacturing process are: wafer manufacturing oxidation photolithography etching deposition metal wiring testing packaging metal wiring process mainly uses different methods to connect billions of electronic components to form different semiconductors (CPU , GPU, etc.), it can be said to "inject life into semiconductors." Sources say Samsung has introduced five Mo deposition machines from Lam Research, and plans to introduce 20 more pieces of equipment next year. In addition to Samsung Electronics, companies such as SK Hynix, Micron and Kioxia are also

Hynix is ​​the first to demonstrate UFS 4.1 flash memory: based on V9 TLC NAND particles Hynix is ​​the first to demonstrate UFS 4.1 flash memory: based on V9 TLC NAND particles Aug 09, 2024 pm 03:33 PM

According to news on August 9, at the FMS2024 Summit, SK Hynix demonstrated its latest storage products, including UFS4.1 universal flash memory that has not yet officially released specifications. According to the official website of the JEDEC Solid State Technology Association, the latest UFS specification currently announced is UFS4.0 in August 2022. Its theoretical interface speed is as high as 46.4Gbps. It is expected that UFS4.1 will further improve the transmission rate. 1. Hynix demonstrated 512GB and 1TBUFS4.1 general-purpose flash memory products, based on 321-layer V91TbTLCNAND flash memory. SK Hynix also exhibited 3.2GbpsV92TbQLC and 3.6GbpsV9H1TbTLC particles. Hynix shows off V7-based

Western Digital launches PC SN5000S NVMe SSD: QLC flash memory, up to 2TB capacity Western Digital launches PC SN5000S NVMe SSD: QLC flash memory, up to 2TB capacity Mar 15, 2024 pm 12:52 PM

According to news from this site on March 14, Western Digital launched the PCSN5000SNVMe solid-state drive. This product is equipped with BICS6 (162-layer) QLC flash memory and is a product for OEM manufacturers. ▲Photos of Western Digital PCSN5000S solid-state drive. Specifically, PCSN5000S uses PCIeGen4x4 interface, NVMe2.0 protocol, and is equipped with Western Digital’s latest self-developed main control. It has optional M.22280/2230 specifications and three capacity versions of 512GB/1TB/2TB. Support nCache4.0 dynamic SLC caching technology. In terms of parameters, the maximum sequential read speed of the three capacities of PCSN5000S is 6000MB/s, and the maximum sequential write rate is 4

The impact of the AI ​​wave is obvious. TrendForce has revised up its forecast for DRAM memory and NAND flash memory contract price increases this quarter. The impact of the AI ​​wave is obvious. TrendForce has revised up its forecast for DRAM memory and NAND flash memory contract price increases this quarter. May 07, 2024 pm 09:58 PM

According to a TrendForce survey report, the AI ​​wave has a significant impact on the DRAM memory and NAND flash memory markets. In this site’s news on May 7, TrendForce said in its latest research report today that the agency has increased the contract price increases for two types of storage products this quarter. Specifically, TrendForce originally estimated that the DRAM memory contract price in the second quarter of 2024 will increase by 3~8%, and now estimates it at 13~18%; in terms of NAND flash memory, the original estimate will increase by 13~18%, and the new estimate is 15%. ~20%, only eMMC/UFS has a lower increase of 10%. ▲Image source TrendForce TrendForce stated that the agency originally expected to continue to

Yangtze Memory QLC flash memory X3-6070 has a write and erase life of 4,000 times, catching up with TLC products Yangtze Memory QLC flash memory X3-6070 has a write and erase life of 4,000 times, catching up with TLC products Mar 28, 2024 pm 03:26 PM

News from this site on March 28, according to Taiwanese media DIGITIMES, Yangtze Memory stated at the China Flash Memory Market Summit CFMS2024 that the X3-6070QLC flash memory using third-generation Xtacking technology has achieved a P/E endurance of 4,000 times. Note from this site: Different from the warranty life, consumer-grade original TLC solid-state drives generally have at least 3,000 P/E-level erase and write life in tests. ▲Image source China Flash Memory Market Summit CFMS official, the same below Huo Zongliang, CTO of Yangtze Memory, said that the NAND flash memory industry has passed the most difficult year of 2023 and will enter a rising period this year. It is expected that the total flash memory demand will grow at a compound rate from 2023 to 2027. The rate can reach 21%, and the average capacity of a single device is

See all articles