Yangtze Memory QLC flash memory X3-6070 has a write and erase life of 4,000 times, catching up with TLC products

News from this site on March 28, according to Taiwanese media DIGITIMES, Yangtze Memory stated at the China Flash Memory Market Summit CFMS2024 that the X3-6070 QLC flash memory using third-generation Xtacking technology has achieved a P/E endurance of 4,000 times.

Note from this site: Different from the warranty life, consumer-grade original TLC solid-state drives generally have at least 3,000 P/E-level erase and write life in tests.

▲ Picture source China Flash Memory Market Summit CFMS official, the same below

Huo Zongliang, CTO of Yangtze River Storage, said that the NAND flash memory industry has now passed the most difficult period. In 2023, this year will enter a period of growth. It is expected that the compound growth rate of total flash memory demand from 2023 to 2027 will reach 21%, and the compound growth rate of the average capacity of a single device will be 20%.

In this rising cycle, the three major new challenges faced by the storage market are the rapid reduction of cost per Gb, accelerated improvement of read and write performance, and meeting diversified needs. Customers expect It's about getting higher density storage at the same price.

In terms of density improvement, The increase in the number of stacked layers of 3D NAND has become a new problem in the industry, so it is necessary to promote the application of QLC NAND. According to market forecasts, QLC’s share is expected to exceed 40% by 2027, significantly higher than last year’s 13%.

Yangtze Memory said that its X3-6070 QLC flash memory using third-generation Xtacking technology compared with the previous generation product, the IO speed is increased by 50%, the storage density is increased by 70%, and the erase and write life reaches 4,000 times P / E.

This means that Yangtze Storage’s QLC technology has been developed maturely and can be expanded to enterprise-level storage, mobile terminals and other fields. Yihengchuangyuan demonstrated the PBlaze7 7340 series data center-grade solid-state drives based on long-term QLC flash memory at this summit.

In terms of technical details, the Xtacking structure's design that separates the CMOS circuit from the flash memory array brings greater flexibility to the operating algorithm, thus improving the reliability of QLC. In addition, the third-generation Xtacking technology enables more flexible voltage modulation, and the read window margin has been improved.

In addition, Yangtze Storage also demonstrated the PC41Q consumer-grade QLC solid-state drive on site. PC41Q has a sequential read and write bandwidth of 5500MB/s. Yangtze Memory claims that the data retention capability and reliability of this solid-state drive are comparable to TLC solid-state drives, achieving 1 year of data retention and 2 million hours of data retention at 30°C. MTBF time.

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