According to reports, Samsung Electronics executive Dae Woo Kim said that at the 2024 Korean Microelectronics and Packaging Society Annual Meeting, Samsung Electronics will complete the verification of the 16-layer hybrid bonding HBM memory technology. It is reported that this technology has passed technical verification. The report also stated that this technical verification will lay the foundation for the development of the memory market in the next few years.
Dae Woo Kim said that Samsung Electronics has successfully manufactured a 16-layer stacked HBM3 memory based on hybrid bonding technology. The memory sample works normally and the 16-layer stacked hybrid bonding technology will be used in the future. Mass production of HBM4 memory.
can significantly increase the signal transmission rate, and is more suitable for the high bandwidth requirements of AI computing.
Hybrid bonding can also reduce the DRAM layer spacing, thereby reducing the overall height of the HMB module, but it also faces the problem of insufficient maturity and expensive application costs.
Samsung Electronics adopts a two-legged strategy in terms of HBM4 memory bonding technology, simultaneously developing hybrid bonding and traditional TC-NCF processes. Based on the picture below and previous reports on this site,The module height limit of HBM4 will be relaxed to 775 microns, which is conducive to the continued use of TC-NCF.
The above is the detailed content of Samsung announced the completion of 16-layer hybrid bonding stacking process technology verification, which is expected to be widely used in HBM4 memory. For more information, please follow other related articles on the PHP Chinese website!